Samsung has announced the development of the first DDR5 memory in the industry based on HKMG (High-K Metal Gate) technology, which comes with a capacity of 512GB and offers a dual memory speed of 7400Mbps compared to DDR4. The new memory is intended for the computer field Super, AI AI and ML Machine Learning.
DDR5 memories are expected to increase their market share in the DDR memories market and even eventually replace the existing DDR4 memories. While it is a long time before DDR5 memories will be the standard in the market, and while SK Hynix was the first to announce DDR5 memories, Samsung’s new DDR5 memory comes with a number of advanced technological features that set it apart from the competition.
The big technological advantage comes in the form of HKMG technology, which replaces the insulation layers in memory with the HKMG material to prevent signal leakage in the chip, with another advantage in the form of 13% lower power consumption. In addition, the new memories use the TSV (through-silicon via) technology that allows 16Gb DRAM chips to be stacked in order to reach the high memory volume.
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HKMG DDR5 memory (Samsung source)
Samsung’s new DDR5 memory is currently in the final stages of development by the company and being tested by its various customers.
The DDR5 memory market is expected to grow significantly in the coming years, especially in the business market, where the main use will be of servers, including Intel’s next Sapphire Rapids processors that will support, according to Samsung, the new memories.
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